BDX33 ， BDX33A ， BDX33B ， BDX33C ， BDX33D
NPN硅功率DARLINGTONS
在25℃的情况下温度的电特性（除非另有说明）
参数
测试条件
BDX33
V
（ BR ） CEO
集电极 - 发射极
击穿电压
BDX33A
I
C
= 100毫安
I
B
= 0
（见注3 ）
BDX33B
BDX33C
BDX33D
V
CE
= 30 V
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
I
首席执行官
集电极 - 发射极
截止电流
V
CE
= 60 V
V
CE
= 30 V
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
V
CE
= 60 V
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
I
CBO
集电极截止
当前
V
CB
= 120 V
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 120 V
I
EBO
发射极截止
当前
V
EB
=
V
CE
=
h
FE
正向电流
传输比
V
CE
=
V
CE
=
V
CE
=
V
CE
=
V
CE
=
V
BE（上）
基射
电压
V
CE
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
V
CE （ SAT ）
集电极 - 发射极
饱和电压
I
B
=
I
B
=
I
B
=
I
B
=
V
EC
并联二极管
正向电压
I
E
=
5V
3V
3V
3V
3V
3V
3V
3V
3V
3V
3V
8毫安
8毫安
6毫安
6毫安
6毫安
8A
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
= 4 A
I
C
= 4 A
I
C
= 3 A
I
C
= 3 A
I
C
= 3 A
I
C
= 4 A
I
C
= 4 A
I
C
= 3 A
I
C
= 3 A
I
C
= 3 A
I
C
= 4 A
I
C
= 4 A
I
C
= 3 A
I
C
= 3 A
I
C
= 3 A
I
B
= 0
（见注3和4）
（见注3和4）
（见注3和4）
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
750
750
750
750
750
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4
V
V
V
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
民
45
60
80
100
120
0.5
0.5
0.5
0.5
0.5
10
10
10
10
10
1
1
1
1
1
5
5
5
5
5
10
mA
mA
mA
V
典型值
最大
单位
注： 3。这些参数必须使用脉冲技术进行测量，T
p
= 300微秒，占空比
≤
2%.
4.这些参数必须使用电压感测接触，分开的载流触点来测量。
2
1993年8月 - 修订2002年9月
特定网络阳离子如有更改，恕不另行通知。
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TCUDORP
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
