欢迎访问ic37.com |
会员登录 免费注册
发布采购

TISP8250DR-S 参数 Datasheet PDF下载

TISP8250DR-S图片预览
型号: TISP8250DR-S
PDF下载: 下载PDF文件 查看货源
内容描述: 单向P- GATE晶闸管过电压和过电流保护 [UNIDIRECTIONAL P-GATE THYRISTOR OVERVOLTAGE AND OVERCURRENT PROTECTOR]
分类和应用: 栅极触发装置可控硅整流器光电二极管过电流保护
文件页数/大小: 4 页 / 180 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
 浏览型号TISP8250DR-S的Datasheet PDF文件第1页浏览型号TISP8250DR-S的Datasheet PDF文件第3页浏览型号TISP8250DR-S的Datasheet PDF文件第4页  
TISP8250D Overvoltage and Overcurrent Protector
Absolute Maximum Ratings, TA = 25
°C
(Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage (see Note 1)
Non-repetitive peak impulse current (see Notes 2, 3 and 4)
2/10
µs
(Telcordia GR-1089-CORE, 2/10
µs
waveshape)
0.2/310 (CNET I 31-24, 0.5/700
µs
waveshape)
5/310
µs
(ITU-T K.20/21, 10/700
µs
voltage waveshape)
5/310
µs
(FTZ R12, 10/700
µs
voltage waveshape)
10/1000
µs
(Telcordia GR-1089-CORE, 10/1000
µs
voltage waveshape)
Non-repetitive peak on-state current, 50 Hz (see Notes 2, 3 and 4)
10 ms half sine wave
1s rectified sine wave
1000 s rectified sine wave
Junction temperature
Storage temperature range
NOTES: 1.
2.
3.
4.
I
TSM
T
J
T
stg
5
3.5
0.7
-40 to +150
-65 to +150
A
75
40
40
40
30
Symbol
V
DRM
Value
250
Unit
V
I
PPSM
A
°
C
°
C
For voltage values at lower temperatures, derate at 0.13 %/
°
C.
Initially the device must be in thermal equilibrium, with T
J
= 25
°
C.
The surge may be repeated after the device returns to its initial conditions.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A printed wiring track
widths. Derate current values at -0.61 %/
°
C for ambient temperatures above 25
°
C.
Electrical Characteristics, TA = 25
°C
(Unless Otherwise Noted)
Parameter
I
DRM
V
(BO)
I
(BO)
I
H
V
GK
I
GT
I
D
C
O
Repetitive peak off-state current
Breakover voltage
Breakover current
Holding current
Gate-cathode voltage
Gate trigger current
Off-state current
Off-state capacitance
V
D
= V
DRM
dv/dt = 250 V/ms, R
SOURCE
= 300
dv/dt = 250 V/ms, R
SOURCE
= 300
I
T
= 5 A, di/dt = -30 mA/ms
I
G
= 30 mA
V
AK
= 100 V
V
D
= 60 V
f = 1 MHz, V
d
= 1 V rms, V
D
= 5 V
15
180
0.6
1.2
40
5
100
Test Conditions
T
A
= 25
°
C
T
A
= 85
°
C
Min Typ Max Unit
5
10
340
µA
V
mA
V
mA
µA
pF
200 mA
Thermal Characteristics, TA = 25
°C
(Unless Otherwise Noted)
Parameter
R
θ
JA
NOTE
Junction to ambient thermal resistance
Test Conditions
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
(see Note 5)
Min Typ Max
Unit
170
°
C/W
5. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5A rated printed wiring track widths.
JULY 2000 - REVISED MARCH 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.