TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Description (continued)
Each terminal pair has a symmetrical voltage-triggered thyristor characteristic. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.These protectors are guaranteed to voltage limit and withstand the listed lightning surges in both polarities.
These medium and high voltage devices are offered in nine voltage variants to meet a range of battery and ringing voltage requirements. They
are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair. Similar devices with working voltages of
58 V and 66 V are detailed in the TISP7072F3, TISP7082F3 data sheet.
Absolute Maximum Ratings, T = 25 °C (Unless Otherwise Noted)
A
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, 0 °C < T < 70 °C
A
‘7125F3
‘7150F3
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3
100
120
145
180
200
220
240
275
270
V
V
DRM
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
330
190
100
175
110
95
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25
Ω resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (FCC Part 68, 10/160 voltage wave shape)
I
A
PPSM
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
70
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
10/560 (FCC Part 68, 10/560 voltage wave shape)
70
70
50
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
45
Non-repetitive peak on-state current, 0 °C < T < 70 °C (see Notes 1 and 3)
A
50 Hz, 1 s
D Package
SL Package
4.3
7.1
I
A
TSM
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
di /dt
250
A/µs
°C
T
Junction temperature
T
-65 to +150
-65 to +150
J
Storage temperature range
T
°C
stg
Initially, the TISP® device must be in thermal equilibrium at the specified T . The impulse may be repeated after the TISP ® device
A
NOTES: 1.
returns to its initial conditions. The rated current values may be applied either to the R to G or to the T to G or to the T to R
terminals. Additionally, both R to G and T to G may have their rated current values applied simultaneously (In this case the total
G terminal current will be twice the above rated current values).
2. See Thermal Information for derated I
values 0 °C < T < 70 °C and Applications Information for details on wave shapes.
PPSM
A
3. Above 70 °C, derate I
linearly to zero at 150 °C lead temperature.
TSM
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
