TISP61089 Gated Protector Series
Recommended Operating Conditions
Component
C
G
Gate decoupling capacitor
Series resistor for GR-1089-CORE first-level surge survival
R
S
Series resistor for GR-1089-CORE first-level and second-level surge survival
Series resistor for GR-1089-CORE intra-building port surge survival
Series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector
Min
100
25
40
8
10
Typ
220
Max
Unit
nF
Ω
Ω
Ω
Ω
Electrical Characteristics, TJ = 25
°
C (Unless Otherwise Noted)
Parameter
I
D
Off-state current
V
D
= V
DRM
, V
GK
= 0
Test Conditions
T
J
= 25
°C
T
J
= 85
°C
-57
-60
-60
-64
9
12
12
16
3
6
8
8
12
-150
T
J
= 25
°C
T
J
= 85
°C
-5
-50
5
2.5
0.1
100
50
mA
µA
µA
mA
V
µC
pF
pF
V
V
V
V
Min
Typ
Max
-5
-50
Unit
µA
µA
V
(BO)
Breakover voltage
2/10
µs,
I
PP
= -56 A, R
S
= 45
Ω,
V
GG
= -48 V, C
G
= 220 nF
2/10
µs,
I
PP
= -100 A, R
S
= 50
Ω,
V
GG
= -48 V, C
G
= 220 nF
1.2/50
µs,
I
PP
= -53 A, R
S
= 47
Ω,
V
GG
= -48 V, C
G
= 220 nF
1.2/50
µs,
I
PP
= -96 A, R
S
= 52
Ω,
V
GG
= -48 V, C
G
= 220 nF
2/10
µs,
I
PP
= -56 A, R
S
= 45
Ω,
V
GG
= -48 V, C
G
= 220 nF
V
GK(BO)
Gate-cathode impulse
breakover voltage
Forward voltage
Peak forward recovery
voltage
Holding current
Gate reverse current
Gate trigger current
Gate-cathode trigger
voltage
Gate switching charge
Cathode-anode off-
state capacitance
2/10
µs,
I
PP
= -100 A, R
S
= 50
Ω,
V
GG
= -48 V, C
G
= 220 nF
1.2/50
µs,
I
PP
= -53 A, R
S
= 47
Ω,
V
GG
= -48 V, C
G
= 220 nF
1.2/50
µs,
I
PP
= -96 A, R
S
= 52
Ω,
V
GG
= -48 V, C
G
= 220 nF
I
F
= 5 A, t
w
= 200
µs
2/10
µs,
I
PP
= 56 A, R
S
= 45
Ω,
V
GG
= -48 V, C
G
= 220 nF
2/10
µs,
I
PP
= 100 A, R
S
= 50
Ω,
V
GG
= -48 V, C
G
= 220 nF
1.2/50
µs,
I
PP
= 53 A, R
S
= 47
Ω,
V
GG
= -48 V, C
G
= 220 nF
1.2/50
µs,
I
PP
= 96 A, R
S
= 52
Ω,
V
GG
= -48 V, C
G
= 220 nF
I
T
= -1 A, di/dt = 1A/ms, V
GG
= -48 V
V
GG
= V
GK
= V
GKRM
, V
KA
= 0
I
T
= -3 A, t
p(g)
≥
20
µs,
V
GG
= -48 V
I
T
= -3 A, t
p(g)
≥
20
µs,
V
GG
= -48 V
1.2/50
µs,
I
PP
= -53 A, R
S
= 47
Ω,
V
GG
= -48 V, C
G
= 220 nF
f = 1 MHz, V
d
= 1 V, I
G
= 0, (see Note 3)
V
D
= -3 V
V
D
= -48 V
V
F
V
FRM
I
H
I
GKS
I
GT
V
GT
Q
GS
C
KA
NOTES: 3. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter
R
θ
JA
Junction to free air thermal resistance
Test Conditions
T
A
= 25
°C,
EIA/JESD51-3
PCB, EIA/JESD51-2
environment, P
TOT
= 1.7 W
NOVEMBER 1995 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Min
D Package
Typ
Max
120
Unit
°C/W
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
