TISP5xxxH3BJ Overvoltage Protection Series
Absolute Maximum Ratings, TA = 25
°C
(Unless Otherwise Noted)
Rating
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
Symbol
Value
-58
-65
-75
-80
-90
-120
-160
±500
±300
±250
±220
±200
±200
±200
±160
±100
55
60
2.1
±400
-40 to +150
-65 to +150
Unit
Repetitive peak off-state voltage (see Note 1)
V
DRM
V
Non-repetitive peak impulse current (see Notes 2, 3 and 4)
2/10
µs
(GR-1089-CORE, 2/10
µs
voltage wave shape)
8/20
µs
(IEC 61000-4-5, 1.2/50
µs
voltage, 8/20
µs
current combination wave generator)
10/160
µs
(TIA-968-A, 10/160
µs
voltage wave shape)
5/200
µs
(VDE 0433, 10/700
µs
voltage waveshape)
0.2/310
µs
(I3124, 0.5/700
µs
waveshape)
5/310
µs
(ITU-T K.44, 10/700
µs
voltage waveshape used in K.20/21/45)
5/310
µs
(FTZ R12, 10/700
µs
voltage waveshape)
10/560
µs
(TIA-968-A, 10/560
µs
voltage wave shape)
10/1000
µs
(GR-1089-CORE, 10/1000
µs
voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms, 50 Hz (full sine wave)
16.7 ms, 60 Hz (full sine wave)
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, GR-1089-CORE 2/10
µs
wave shape
Junction temperature
Storage temperature range
NOTES: 1.
2.
3.
4.
5.
I
TSM
di
T
/dt
T
J
T
stg
A
A/µs
°C
°C
I
PPSM
A
See Figure 9 for voltage values at lower temperatures.
Initially the device must be in thermal equilibrium with T
J
= 25
°C.
The surge may be repeated after the device returns to its initial conditions.
See Figure 10 for current ratings at other temperatures.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25
°C.
See Figure 8 for current ratings at other
durations.
Electrical Characteristics, TA = 25
°C
(Unless Otherwise Noted)
Parameter
I
DRM
Repetitive peak off-state current
V
D
= V
DRM
Test Conditions
T
A
= 25
°C
T
A
= 85
°C
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
Min Typ Max
-5
-10
-70
-80
-95
-110
-115
-150
-190
-80
-90
-105
-120
-125
-160
-200
Unit
µA
V
(BO)
Breakover voltage
dv/dt = -250 V/ms, R
SOURCE
= 300
Ω
V
V
(BO)
Impulse breakover voltage
dv/dt
≥
-1000 V/µs, Linear voltage ramp,
Maximum ramp value = -500 V
di/dt = -20 A/µs, Linear current ramp,
Maximum ramp value = -10 A
V
JANUARY 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
