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TISP4165M3LM 参数 Datasheet PDF下载

TISP4165M3LM图片预览
型号: TISP4165M3LM
PDF下载: 下载PDF文件 查看货源
内容描述: 双向晶闸管过电压保护 [BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS]
分类和应用:
文件页数/大小: 16 页 / 444 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
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TISP4xxxM3LM Overvoltage Protector Series  
APPLICATIONS INFORMATION  
AC Power Testing  
The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be  
terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent  
protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere.  
In some cases, it may be necessary to add some extra series resistance to prevent the fuse from opening during impulse testing. The current  
versus time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases there may be a further time  
limit imposed by the test standard (e.g. UL 1459 wiring simulator failure).  
Capacitance  
The protector characteristic off-state capacitance values are given for d.c. bias voltage, V , values of 0, -1 V, -2 V and -50 V. Where possible,  
D
values are also given for -100 V. Values for other voltages may be calculated by multiplying the V = 0 capacitance value by the factor given in  
D
Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly  
dependent on connection inductance. In many applications, such as Figure 15 and Figure 17, the typical conductor bias voltages will be about  
-2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V.  
Normal System Voltage Levels  
The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the  
line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating the  
ring trip circuit.  
Figure 10 allows the calculation of the protector V  
maximum normal system voltages. The TISP4260M3LM, with a V  
DRM  
value at temperatures below 25 °C. The calculated value should not be less than the  
of 200 V, can be used for the protection of ring generators producing  
DRM  
100 V rms of ring on a battery voltage of -58 V (Th2 and Th3 in Figure 17). The peak ring voltage will be 58 + 1.414*100 = 199.4 V. However,  
this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. In the extreme case of an  
unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This level of clipping would occur at the temperature  
when the V  
has reduced to 190/200 = 0.95 of its 25 °C value. Figure 10 shows that this condition will occur at an ambient temperature of  
DRM  
-28 °C. In this example, the TISP4260M3LM will allow normal equipment operation provided that the minimum expected ambient temperature  
does not fall below -28 °C.  
JESD51 Thermal Measurement Method  
To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard  
3
3
(JESD51-2, 1995) describes the test environment. This is a 0.0283 m (1 ft ) cube which contains the test PCB (Printed Circuit Board)  
horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for  
packages smaller than 27 mm (1.06 ) on a side and the other for packages up to 48 mm (1.89 ). The LM package measurements used the  
smaller 76.2 mm x 114.3 mm (3.0 ’’ x 4.5 ) PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal  
resistance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance  
and so can dissipate higher power levels than indicated by the JESD51 values.  
NOVEMBER 1997 - REVISED FEBRUARY 2005  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.