TISP4xxxM3LM Overvoltage Protector Series
Description (continued)
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.
This TISP4xxxM3LM range consists of seventeen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are supplied in a
DO-92 (LM) cylindrical plastic package. The TISP4xxxM3LM is a straight lead DO-92 supplied in bulk pack and on tape and reel. The
TISP4xxxM3LMF is a formed lead DO-92 supplied only on tape and reel. For higher rated impulse currents in the DO-92 package, the 100 A
10/1000 TISP4xxxH3LM series is available.
Absolute Maximum Ratings, TA = 25
°C
(Unless Otherwise Noted)
Rating
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4250
‘4260
‘4290
‘4300
‘4350
‘4395
‘4400
Symbol
Value
±
58
±
65
±
75
±
90
±100
±120
±135
±145
±160
±180
±190
±200
±220
±230
±275
±320
±300
300
220
120
110
100
100
100
100
75
50
30
32
2.1
300
-40 to +150
-65 to +150
Unit
Repetitive peak off-state voltage, (see Note 1)
V
DRM
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10
µs
(GR-1089-CORE, 2/10
µs
voltage wave shape)
8/20
µs
(IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
10/160
µs
(FCC Part 68, 10/160
µs
voltage wave shape)
5/200
µs
(VDE 0433, 10/700
µs
voltage wave shape)
0.2/310
µs
(I 31-24, 0.5/700
µs
voltage wave shape)
5/310
µs
(ITU-T K.20/21, 10/700
µs
voltage wave shape)
5/310
µs
(FTZ R12, 10/700
µs
voltage wave shape)
5/320
µs
(FCC Part 68, 9/720
µs
voltage wave shape)
10/560
µs
(FCC Part 68, 10/560
µs
voltage wave shape)
10/1000
µs
(GR-1089-CORE, 10/1000
µs
voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A
Junction temperature
Storage temperature range
NOTES: 1.
2.
3.
4.
5.
I
TSP
A
I
TSM
di
T
/dt
T
J
T
stg
A
A/µs
°C
°C
See Applications Information and Figure 10 for voltage values at lower temperatures.
Initially the TISP4xxxM3LM must be in thermal equilibrium with T
J
= 25
°C.
The surge may be repeated after the TISP4xxxM3LM returns to its initial conditions.
See Applications Information and Figure 11 for current ratings at other temperatures.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient
temperatures above 25
°C
NOVEMBER 1997 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
