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TISP4015L1BJR-S 参数 Datasheet PDF下载

TISP4015L1BJR-S图片预览
型号: TISP4015L1BJR-S
PDF下载: 下载PDF文件 查看货源
内容描述: 非常低的电压的双向晶闸管过电压保护 [VERY LOW VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS]
分类和应用: 触发装置硅浪涌保护器光电二极管
文件页数/大小: 15 页 / 484 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
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TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Absolute Maximum Ratings, TA = 25
°C
(Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
2/10
µs
(T
elcordia GR-1089-CORE, 2/10
µs
voltage wave shape)
8/20
µs
(IEC 61000-4-5, comb ination wave generator, 1.2/50 voltage, 8/20 current)
10/160
µs
(FCC Part 68, 10/160
µs
voltage wave shape)
5/310
µs
(ITU-T K.20/45/21, 10/700
µs
voltage wave shape)
5/320
µs
(FCC Part 68, 9/720
µs
voltage wave shape)
10/560
µs
(FCC Part 68, 10/560
µs
voltage wave shape)
10/1000
µs
(T
elcordia GR-1089-CORE, 10/1000
µs
voltage wave shape)
Non-repetitive peak on-state current (see Notes 1 and 2)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
0.2 s 50 Hz/60 Hz a.c.
2 s 50 Hz/60 Hz a.c.
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of current (2/10 waveshape)
Maximum junction temperature
Storage temperature range
NOTES: 1. Initially, the device must be in thermal equilibrium with T
J
= 25
°C.
2. The surge may be repeated after the device returns to its initial conditions.
20
22
13
5
1.8
130
150
-65 to +150
±
150
±
120
±
65
±
45
±
45
±
35
±
30
‘4015
‘4030
‘4040
Symbol
V
DRM
Value
±8
±15
±
25
Unit
V
I
TSP
A
I
TSM
A
di/d t
T
JM
T
stg
A/µs
°C
°C
Electrical Characteristics, TA = 25
°C
(Unless Otherwise Noted)
Parameter
I
DRM
Repetitive peak off-
state current
Breakover voltage
V
D
= V
DRM
‘4015
‘4030
‘4040
‘4015
‘4030
‘4040
Test Conditions
Min
Typ
Max
±5
±15
±30
±40
±34
±50
±63
±0.8
‘4015
‘4030
‘4040
±50
±2
Unit
µA
V
(BO)
di/dt =
±0.8
A/ms
dv/dt
=
±1000
V/µs, Linear voltage ramp,
Maximum ramp value =
±500
V
di/dt =
±5
A/µs, Linear current ramp,
Maximum ramp value =
±10
A
di/dt =
±0.8
A/ms
V
D
=
±
6 V
V
D
=
±
13 V
V
D
=
±
22 V
I
T
=
±5
A, di/dt = +/-30 mA/ms
V
V
(BO)
Impulse breakover
voltage
Breakover current
Off-state current
Holding current
V
I
(BO)
I
D
I
H
A
µA
mA
AUGUST 1999 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.