欢迎访问ic37.com |
会员登录 免费注册
发布采购

TISP3260F3SL 参数 Datasheet PDF下载

TISP3260F3SL图片预览
型号: TISP3260F3SL
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压双的双向晶闸管过电压保护 [HIGH-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS]
分类和应用:
文件页数/大小: 12 页 / 613 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
 浏览型号TISP3260F3SL的Datasheet PDF文件第4页浏览型号TISP3260F3SL的Datasheet PDF文件第5页浏览型号TISP3260F3SL的Datasheet PDF文件第6页浏览型号TISP3260F3SL的Datasheet PDF文件第7页浏览型号TISP3260F3SL的Datasheet PDF文件第8页浏览型号TISP3260F3SL的Datasheet PDF文件第9页浏览型号TISP3260F3SL的Datasheet PDF文件第10页浏览型号TISP3260F3SL的Datasheet PDF文件第12页  
TISP3xxxF3 (HV) Overvoltage Protector Series  
APPLICATIONS INFORMATION  
Protection Voltage  
The protection voltage, (V(BO)), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on  
the rate of current rise, di/dt, when the TISP® device is clamping the voltage in its breakdown region. The V(BO) value under surge  
conditions can be estimated by multiplying the 50 Hz rate V(BO) (250 V/ms) value by the normalized increase at the surge’s di/dt (Figure  
7 ). An estimate of the di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.  
As an example, the ITU-T K.21 1.5 kV, 10/700 µs surge has an average dv/dt of 150 V/µs, but, as the rise is exponential, the initial dv/dt  
is higher, being in the region of 450 V/µs. The instantaneous generator output resistance is 25 . If the equipment has an additional  
series resistance of 20 , the total series resistance becomes 45 . The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In  
practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the  
TISP® breakdown region.  
Capacitance  
Off-state Capacitance  
The off-state capacitance of a TISP® device is sensitive to junction temperature, TJ, and the bias voltage, comprising of the d.c. voltage,  
VD, and the a.c. voltage, Vd. All the capacitance values in this data sheet are measured with an a.c. voltage of 100 mV. The typical 25 °C  
variation of capacitance value with a.c. bias is shown in Figure 17. When VD >> Vd, the capacitance value is independent on the value of  
Vd. The capacitance is essentially constant over the range of normal telecommunication frequencies.  
NORMALIZED CAPACITANCE  
vs  
RMS AC TEST VOLTAGE  
AIXXAA  
1.05  
1.00  
0.95  
0.90  
0.85  
0.80  
Normalized to Vd = 100 mV  
DC Bias, VD = 0  
0.75  
0.70  
1
10  
100  
1000  
Vd - RMS AC Test Voltage - mV  
Figure 17.  
MARCH 1994 - REVISED MARCH 2006  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.