TIP33, TIP33A, TIP33B, TIP33C
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
JULY 1968 - REVISED MARCH 1997
q
Designed for Complementary Use with the
TIP34 Series
80 W at 25°C Case Temperature
B
SOT-93 PACKAGE
(TOP VIEW)
1
q
q
q
q
10 A Continuous Collector Current
15 A Peak Collector Current
Customer-Specified Selections Available
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
C
2
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
TIP33
Collector-base voltage (I
E
= 0)
TIP33A
TIP33B
TIP33C
TIP33
Collector-emitter voltage (I
B
= 0)
TIP33A
TIP33B
TIP33C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
�½LI
C
T
j
T
stg
T
L
2
SYMBOL
VALUE
80
100
120
140
40
60
80
100
5
10
15
3
80
3.5
62.5
-65 to +150
-65 to +150
250
UNIT
V
CBO
V
V
CEO
V
V
A
A
A
W
W
mJ
°C
°C
°C
This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= 20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1