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CDNBS08-PLC03-3.3 参数 Datasheet PDF下载

CDNBS08-PLC03-3.3图片预览
型号: CDNBS08-PLC03-3.3
PDF下载: 下载PDF文件 查看货源
内容描述: CDNBS08 - PLC03-3.3转向​​二极管/ TVS阵列组合 [CDNBS08-PLC03-3.3 Steering Diode/TVS Array Combo]
分类和应用: 二极管电视
文件页数/大小: 4 页 / 328 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
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PL
IA
Features
Applications
NT
Lead free device (RoHS compliant*)
100 A (2/10 µs) per Bellcore GR1089
(Intra-Building)
Protects 2 lines
ESD protection
Low capacitance 8 pF
T1/E1 line cards
ISDN U-Interface and S/T Interface
xDSL
Ethernet – 10/100 Base T
*R
oH
S
CO
M
CDNBS08-PLC03-3.3 Steering Diode/TVS Array Combo
General Information
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
components.
Bourns offers Steering Diode/Transient Voltage Suppressor Array combination diodes
for surge and ESD protection applications in an 8 Lead Narrow Body SOIC package
size format. Bourns Chip Diodes conform to JEDEC standards, are easy to handle on
standard pick and place equipment and their flat configuration minimizes roll away.
The Bourns® device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC
61000-4-5 (Surge) requirements.
1
2
3
4
8
7
6
5
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Capacitance @ 0 V 1 MHz
1
Capacitance @ 0 V 1 MHz
2
Working Peak Voltage
Min Breakdown Voltage @ 1 mA
Clamping Voltage @ 8/20 µs @ IPP = 100 A
3, 4
Clamping Voltage @ 8/20 µs @ IP = 50 A, Line - Ground
Max Leakage Current @ V
WM
ESD Protection: IEC 61000-4-2
Contact Discharge
Air Discharge
Peak Pulse Power (tp = 8/20 µs)
5
P
PP
Symbol
C
j(SD)
C
j(SD)
V
WM
V
BR
V
F
V
F
I
D
3.3
18
11
2
µA
Min.
Nom.
20
8
Max.
25
12
3.0
Unit
pF
pF
V
V
V
±8
±15
1800
kV
kV
W
Notes:
1. Measured between I/O pins and ground (pin 1 or 2).
2. Measured between I/O pins (pins 1 to 4).
3. See Pulse Wave Form. For an 8/20 µs waveform, apply positive pulse to pin 1 to 8 to pin 2 or 3 (ground).
4. Measured between pin 1 or 8 to pin 2 or 3; pin 1 or 8 to pin 4 or 5.
5. See Peak Pulse Power vs. Pulse Time.
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Junction Temperature Range
Storage Temperature Range
Symbol
T
J
T
STG
Min.
-55
-55
Nom.
+25
+25
Max.
+150
+150
Unit
°C
°C
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.