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CD216A-B120R 参数 Datasheet PDF下载

CD216A-B120R图片预览
型号: CD216A-B120R
PDF下载: 下载PDF文件 查看货源
内容描述: 提供无铅版本,符合RoHS (无铅版) ,低轮廓,表面贴装,极低的正向电压降 [Lead free versions available, RoHS compliant (lead free version), Low profile, Surface mount, Very low forward voltage drop]
分类和应用: 整流二极管
文件页数/大小: 7 页 / 457 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
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VE S CO
AV R M
AI SIO PL
LA N IA
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Features
Applications
Lead free versions available
RoHS compliant (lead free version)*
Low profile
Surface mount
Very low forward voltage drop
Cellular phones
PDAs
Desktop PCs and notebooks
Digital cameras
MP3 players
*R
CD216A-B120L ~ B140 MITE Chip Diode
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers Schottky Rectifier Diodes for rectification applications in compact DO-216AA size chip package formats, which offer PCB real
estate savings and are considerably smaller than competitive parts. The Schottky Barrier Rectifier Diodes offer a forward current of 1 A with a
choice of repetitive peak reverse voltage of 20 V up to 40 V.
Bourns
®
Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration
minimizes roll away.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
B120L
B120R
CD216-
B130L
B140
Unit
Forward Voltage (Max.)
(If = 1 A)
Typical Junction
Capacitance*
Reverse Current (Max.)
(at Rated VR)
VF
CT
IR
0.45
90
400
0.53
75
10
0.38
70
410
0.55
60
500
V
pF
µA
* Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
B120L
B120R
CD216-
B130L
B140
Unit
Repetitive Peak Reverse Voltage
DC Blocking Voltage
RMS Voltage
Average Forward Current
@ TL = 130 °C
Peak Forward Surge Current**
Max. Instantaneous Forward Voltage***
@ IF = 0.1 A
@ IF = 1.0 A
@ IF = 2.0 A
@ IF = 3.0 A
Max. Instantaneous Reverse Current
@ VR = 40 V
@ VR = 30 V
@ VR = 20 V
@ VR = 10 V
@ VR = 5 V
Thermal Resistance
Junction to Lead (Anode)
Junction to Tab (Cathode)
Junction to Ambient
Storage Temperature
Junction Temperature
VRRM
VDC
VRMS
IO
IFSM
VF
20
20
14
20
20
14
1
30
30
21
40
40
28
V
V
V
A
50
0.34
0.45
0.65
50
0.455
0.53
0.595
50
0.30
0.38
0.52
40
0.36
0.55
0.85
0.50
A
V
IR
0.4
0.1
0.0100
0.0010
0.0005
35
20
250
-55 to +125
-55 to +150
0.41
0.13
0.05
0.15
mA
R
θJL
R
θJTAB
R
θJA
TSTG
TJ
°C/W
°C/W
°C/W
°C
°C
** Surge Current 8.3 ms single phase, half sine wave, 60 Hz (JEDEC Method).
*** Pulse Test; Pulse Width = 300 uS, Duty Cycle = 2 %.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.