BUX85
NPN SILICON POWER TRANSISTOR
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V
CEO(sus)
I
CES
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
t
C
ob
NOTES: 2.
3.
4.
5.
Collector-emitter
sustaining voltage
Collector-emitter
cut-off current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Current gain
bandwidth product
Output capacitance
I
C
=
0.1 A
TEST CONDITIONS
L = 25 mH
V
BE
= 0
V
BE
= 0
I
C
= 0
I
C
= 0.1 A
I
C
= 0.3 A
I
C
=
I
C
=
1A
1A
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
12
f = 0.1 MHz
60
35
0.8
1
1.1
V
V
MHz
pF
T
C
= 125°C
(see Note 2)
MIN
450
0.2
1
1
TYP
MAX
UNIT
V
mA
mA
V
CE
= 1000 V
V
CE
= 1000 V
V
EB
=
V
CE
=
I
B
=
I
B
=
I
B
=
V
CE
=
V
CB
=
5V
5V
0.03 A
0.2 A
0.2 A
10 V
20 V
I
C
= 0.2 A
I
E
= 0
Inductive loop switching measurement.
These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
To obtain f
t
the [h
FE
] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [h ] = 1.
FE
thermal characteristics
PARAMETER
R
θJC
Junction to case thermal resistance
MIN
TYP
MAX
2.5
UNIT
°C/W
resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
t
on
t
s
t
f
t
f
†
TEST CONDITIONS
I
C
= 1 A
V
CC
= 250 V
I
C
= 1 A
V
CC
= 250 V
I
B(on)
= 0.2 A
†
MIN
I
B(off)
= -0.4 A
TYP
0.25
1.8
0.2
MAX
0.5
UNIT
µs
µs
µs
Turn on time
Storage time
Fall time
Fall time
(see Figures 1 and 2)
I
B(on)
= 0.2 A
T
C
= 95°C
I
B(off)
= -0.4 A
0.4
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
