BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAP762AA
I
C
- Collector Current - A
10
1·0
0.1
t
p
= 100
µs
1 ms
t
p
=
t
p
= 10 ms
DC Operation
10
BUV47
BUV47A
100
1000
0·01
1·0
V
CE
- Collector-Emitter Voltage - V
Figure 9.
THERMAL INFORMATION
THERMAL RESPONSE JUNCTION TO CASE
vs
POWER PULSE DURATION
1·0
50%
20%
0·1
10%
5%
2%
1%
0·01
0%
t1
Z
θJC
/ R
θJC
- Normalised Transient Thermal Impedance
TCP762AD
duty cycle = t1/t2
Read time at end of t1,
T
J(max)
- T
C
= P
D(peak)
·
10
-4
10
-3
Z
θJC
R
θJC
t2
( )
10
-2
· R
θJC(max)
10
-1
0·001
10
-5
t
1
- Power Pulse Duration -s
Figure 10.
6
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
