BUT11
NPN SILICON POWER TRANSISTOR
PARAMETER MEASUREMENT INFORMATION
33
Ω
+5V
D45H11
BY205-400
BY205-400
33
Ω
1 pF
RB
(on)
180
µH
vcc
V Gen
68
Ω
1 k
Ω
0.02
µF
+5V
1 k
Ω
2N2222
TUT
BY205-400
Vclamp = 400 V
270
Ω
BY205-400
1 k
Ω
2N2904
5X BY205-400
Adjust pw to obtain I
C
47
Ω
For I
C
< 6 A
For I
C
≥
6 A
V
CC
= 50 V
V
CC
= 100 V
100
Ω
D44H11
V
BE(off)
Figure 1. Inductive-Load Switching Test Circuit
I B(on)
A - B = t
sv
B - C = t
rv
D - E = t
fi
E - F = t
ti
B - E = t
xo
IB
A (90%)
Base Current
C
90%
V
CE
B
10%
Collector Voltage
D (90%)
E (10%)
I
C(on)
Collector Current
F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t
r
< 15 ns, R
in
> 10
Ω,
C
in
< 11.5 pF.
B. Resistors must be noninductive types.
Figure 2. Inductive-Load Switching Waveforms
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
