BU426, BU426A
NPN SILICON POWER TRANSISTORS
●
●
Rugged Triple-Diffused Planar Construction
900 Volt Blocking Capability
B
SOT-93 PACKAGE
(TOP VIEW)
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current (see Note 1)
Continuous device dissipation at (or below) 50°C case temperature
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for t
p
≤
2 ms, duty cycle
≤
2%.
BU426
BU426A
BU426
BU426A
BU426
BU426A
SYMBOL
V
CBO
V
CES
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
VALUE
800
900
800
900
375
400
6
10
+2, -0.1
±3
70
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
A
A
W
°C
°C
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1