BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BDW93
V
(BR)CEO
I
C
= 100 mA
I
B
= 0
(see Note 3)
BDW93A
BDW93B
BDW93C
V
CB
= 40 V
I
CEO
Collector-emitter
cut-off current
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 80 V
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
I
CBO
Collector cut-off
current
V
CB
= 100 V
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
I
EBO
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Parallel diode
forward voltage
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
I
B
=
I
E
=
I
E
=
5V
3V
3V
3V
20 mA
20 mA
5A
10 A
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
=
I
C
=
I
C
=
I
C
=
I
B
= 0
I
B
= 0
3A
(see Notes 3 and 4)
5A
5A
5A
(see Notes 3 and 4)
(see Notes 3 and 4)
1000
100
750
20000
2
3
2.5
4
2
4
V
V
V
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
BDW93
BDW93A
BDW93B
BDW93C
BDW93
BDW93A
BDW93B
BDW93C
BDW93
BDW93A
BDW93B
BDW93C
MIN
45
60
80
100
1
1
1
1
0.1
0.1
0.1
0.1
5
5
5
5
2
mA
mA
mA
V
TYP
MAX
UNIT
h
FE
I
C
= 10 A
V
CE(sat)
V
BE(sat)
V
EC
I
B
= 100 mA
I
B
= 100 mA
I
C
= 10 A
I
C
= 10 A
NOTES: 3. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.56
62.5
UNIT
°C/W
°C/W
2
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
