BDW53, BDW53A, BDW53B, BDW53C, BDW53D
NPN SILICON POWER DARLINGTONS
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Designed for Complementary Use with
BDW54, BDW54A, BDW54B, BDW54C and
BDW54D
40 W at 25°C Case Temperature
B
TO-220 PACKAGE
(TOP VIEW)
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●
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1
2
3
4 A Continuous Collector Current
Minimum h
FE
of 750 at 3V, 1.5 A
C
E
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BDW53
BDW53A
Collector-base voltage (I
E
= 0)
BDW53B
BDW53C
BDW53D
BDW53
BDW53A
Collector-emitter voltage (I
B
= 0) (see Note 1)
BDW53B
BDW53C
BDW53D
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
B
P
tot
P
tot
�½LI
C
T
j
T
stg
T
A
2
SYMBOL
VALUE
45
60
UNIT
V
CBO
80
100
120
45
60
V
V
CEO
80
100
120
5
4
50
40
2
25
-65 to +150
-65 to +150
-65 to +150
V
V
A
mA
W
W
mJ
°C
°C
°C
These values apply when the base-emitter diode is open circuited.
Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 5 mA, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= 20 V.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1