BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
●
●
●
●
Designed for Complementary Use with
BDV64, BDV64A, BDV64B and BDV64C
125 W at 25°C Case Temperature
12 A Continuous Collector Current
Minimum h
FE
of 1000 at 4 V, 5 A
C
B
SOT-93 PACKAGE
(TOP VIEW)
1
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BDV65
Collector-base voltage (I
E
= 0)
BDV65A
BDV65B
BDV65C
BDV65
Collector-emitter voltage (I
B
= 0)
BDV65A
BDV65B
BDV65C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for t
p
≤
0.1 ms, duty cycle
≤
10%
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
60
80
100
120
60
80
100
120
5
12
15
0.5
125
3.5
-65 to +150
-65 to +150
260
V
A
A
A
W
W
°C
°C
°C
V
V
UNIT
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1