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BDV64C 参数 Datasheet PDF下载

BDV64C图片预览
型号: BDV64C
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅功率DARLINGTONS [PNP SILICON POWER DARLINGTONS]
分类和应用: 晶体晶体管功率双极晶体管局域网
文件页数/大小: 5 页 / 110 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
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BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
Designed for Complementary Use with
BDV65, BDV65A, BDV65B and BDV65C
125 W at 25°C Case Temperature
12 A Continuous Collector Current
Minimum h
FE
of 1000 at 4 V, 5 A
C
B
SOT-93 PACKAGE
(TOP VIEW)
1
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BDV64
Collector-base voltage (I
E
= 0)
BDV64A
BDV64B
BDV64C
BDV64
Collector-emitter voltage (I
B
= 0)
BDV64A
BDV64B
BDV64C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for t
p
0.1 ms, duty cycle
10%
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
-60
-80
-100
-120
-60
-80
-100
-120
-5
-12
-15
-0.5
125
3.5
-65 to +150
-65 to +150
260
V
A
A
A
W
W
°C
°C
°C
V
V
UNIT
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1