BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BDV64
V
(BR)CEO
I
C
= -30 mA
I
B
= 0
(see Note 4)
BDV64A
BDV64B
BDV64C
V
CB
= -30 V
I
CEO
Collector-emitter
cut-off current
V
CB
= -40 V
V
CB
= -50 V
V
CB
= -60 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
I
CBO
Collector cut-off
current
V
CB
= -120 V
V
CB
= -30 V
V
CB
= -40 V
V
CB
= -50 V
V
CB
= -60 V
I
EBO
h
FE
V
CE(sat)
V
BE
V
EC
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
V
EB
=
V
CE
=
I
B
=
V
CE
=
I
E
=
-5 V
-4 V
-20 mA
-4 V
-10 A
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
= -5 A
I
C
= -5 A
I
C
= -5 A
I
B
= 0
(see Notes 4 and 5)
(see Notes 4 and 5)
(see Notes 4 and 5)
(see Notes 4 and 5)
1000
-2
-2.5
-3.5
V
V
V
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
MIN
-60
-80
-100
-120
-2
-2
-2
-2
-0.4
-0.4
-0.4
-0.4
-2
-2
-2
-2
-5
mA
mA
mA
V
TYP
MAX
UNIT
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1
35.7
UNIT
°C/W
°C/W
2
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
