BD745, BD745A, BD745B, BD745C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
100
TCS635AE
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
10
I
C
= 10
I
B
t
p
= 300µs, duty cycle < 2%
TCS635AF
T
C
= 125°C
T
C
= 25°C
T
C
= -55°C
h
FE
- DC Current Gain
1·0
0·1
V
CE
= 4 V
t
p
= 300 µs, duty cycle < 2%
10
0·1
1·0
10
100
I
C
- Collector Current - A
T
C
= -55°C
T
C
= 25°C
T
C
= 125°C
0·01
0·1
1·0
10
100
I
C
- Collector Current - A
Figure 1.
Figure 2.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAS635AC
I
C
- Collector Current - A
10
t
p
= 1 ms,
d = 0.1 = 10%
t
p
= 10 ms,
d = 0.1 = 10%
t
p
= 50 ms,
d = 0.1 = 10%
DC Operation
1·0
0·1
BD745
BD745A
BD745B
BD745C
0·01
1·0
10
100
1000
V
CE
- Collector-Emitter Voltage - V
Figure 3.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
