BD743, BD743A, BD743B, BD743C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
100
TCS637AA
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
10
I
C
= 10
I
B
t
p
= 300µs, duty cycle < 2%
TCS637AB
T
C
= 125°C
T
C
= 25°C
T
C
= -55°C
h
FE
- DC Current Gain
1·0
0·1
V
CE
= 4 V
t
p
= 300 µs, duty cycle < 2%
10
0·1
1·0
10
100
T
C
= -55°C
T
C
= 25°C
T
C
= 125°C
0·01
0·1
1·0
10
100
I
C
- Collector Current - A
I
C
- Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
10
V
CE
= 4 V
t
p
= 300µs, duty cycle < 2%
V
BE
- Base-Emitter Voltage - V
TCS637AC
1·0
T
C
= -55°C
T
C
= 25°C
T
C
= 125°C
0·1
0·1
1·0
10
100
I
C
- Collector Current - A
Figure 3.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
