欢迎访问ic37.com |
会员登录 免费注册
发布采购

BD544B 参数 Datasheet PDF下载

BD544B图片预览
型号: BD544B
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅功率晶体管 [PNP SILICON POWER TRANSISTORS]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 104 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
 浏览型号BD544B的Datasheet PDF文件第2页浏览型号BD544B的Datasheet PDF文件第3页浏览型号BD544B的Datasheet PDF文件第4页浏览型号BD544B的Datasheet PDF文件第5页  
BD544, BD544A, BD544B, BD544C
PNP SILICON POWER TRANSISTORS
Designed for Complementary Use with the
BD543 Series
70 W at 25°C Case Temperature
8 A Continuous Collector Current
10 A Peak Collector Current
Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD544
Collector-base voltage (I
E
= 0)
BD544A
BD544B
BD544C
BD544
Collector-emitter voltage (I
B
= 0)
BD544A
BD544B
BD544C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for t
p
0.3 ms, duty cycle
10%.
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
I
CM
P
tot
P
tot
T
A
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
-40
-60
-80
-100
-40
-60
-80
-100
-5
-8
-10
70
2
-65 to +150
-65 to +150
-65 to +150
260
V
A
A
W
W
°C
°C
°C
°C
V
V
UNIT
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1