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BD540 参数 Datasheet PDF下载

BD540图片预览
型号: BD540
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅功率晶体管 [PNP SILICON POWER TRANSISTORS]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 104 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
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BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD540
V
(BR)CEO
I
C
= -30 mA
(see Note 4)
V
CE
= -40 V
I
CES
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= -60 V
V
CE
= -80 V
V
CE
= -100 V
I
CEO
I
EBO
V
CE
= -30 V
V
CE
= -60 V
V
EB
=
V
CE
=
V
CE
=
V
CE
=
-5 V
-4 V
-4 V
-4 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
= -0.5 A
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
-1 A
-3 A
- 1A
-3 A
- 5A
-3 A
(see Notes 4 and 5)
f = 1 kHz
f = 1 MHz
20
3
(see Notes 4 and 5)
(see Notes 4 and 5)
40
30
12
-0.25
-0.8
-1.5
-1.25
V
V
I
B
= 0
BD540A
BD540B
BD540C
BD540
BD540A
BD540B
BD540C
BD540/540A
BD540B/540C
MIN
-40
-60
-80
-100
-0.2
-0.2
-0.2
-0.2
-0.3
-0.3
-1
mA
mA
mA
V
TYP
MAX
UNIT
h
FE
I
B
= -125 mA
I
B
= -375 mA
I
B
=
V
CE
=
-1 A
-4 V
V
CE(sat)
V
BE
h
fe
V
CE
= -10 V
V
CE
= -10 V
I
C
= -0.5 A
I
C
= -0.5 A
|
h
fe
|
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
2.78
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
TEST CONDITIONS
I
C
= -1 A
V
BE(off)
= 4.3 V
I
B(on)
= -0.1 A
R
L
= 30
MIN
I
B(off)
= 0.1 A
t
p
= 20 µs, dc
2%
TYP
0.3
1
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP