BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
1000
V
CE
= 4 V
t
p
= 300 µs, duty cycle < 2%
TCS631AH
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
10
TCS631AB
T
C
= 25°C
T
C
= 80°C
h
FE
- DC Current Gain
1·0
100
0·1
I
C
=
I
C
=
I
C
=
I
C
=
0·01
0·1
100 mA
300 mA
1A
3A
1·0
10
100
1000
10
0·01
0·1
1·0
10
I
C
- Collector Current - A
I
B
- Base Current - mA
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
1·0
V
CE
= 4 V
T
C
= 25°C
V
BE
- Base-Emitter Voltage - V
0·9
TCS631AC
0·8
0·7
0·6
0·5
0·01
0·1
1·0
10
I
C
- Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
