BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD250
V
(BR)CEO
I
C
= -30 mA
(see Note 5)
V
CE
= -55 V
I
CES
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= -70 V
V
CE
= -90 V
V
CE
= -115 V
I
CEO
I
EBO
V
CE
= -30 V
V
CE
= -60 V
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
I
B
=
V
CE
=
V
CE
=
-5 V
-4 V
-4 V
-4 V
-1.5 A
-5 A
-4 V
-4 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
= -1.5 A
I
C
= -15 A
I
C
= -25 A
I
C
= -15 A
I
C
= -25 A
I
C
= -15 A
I
C
= -25 A
I
C
=
I
C
=
- 1A
-1 A
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
f = 1 MHz
25
3
(see Notes 5 and 6)
25
10
5
-1.8
-4
-2
-4
V
V
I
B
= 0
BD250A
BD250B
BD250C
BD250
BD250A
BD250B
BD250C
BD250/250A
BD250B/250C
MIN
-45
-60
-80
-100
-0.7
-0.7
-0.7
-0.7
-1
-1
-1
mA
mA
mA
V
TYP
MAX
UNIT
h
FE
V
CE(sat)
V
BE
h
fe
V
CE
= -10 V
V
CE
= -10 V
|
h
fe
|
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1
42
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= -5 A
V
BE(off)
= 5 V
I
B(on)
= -0.5 A
R
L
= 5
Ω
†
MIN
I
B(off)
= 0.5 A
t
p
= 20 µs, dc
≤
2%
TYP
0.2
0.4
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
