BD249, BD249A, BD249B, BD249C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD249
V
(BR)CEO
I
C
= 30 mA
(see Note 5)
V
CE
= 55 V
I
CES
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= 70 V
V
CE
= 90 V
V
CE
= 115 V
I
CEO
I
EBO
V
CE
= 30 V
V
CE
= 60 V
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
I
B
=
V
CE
=
V
CE
=
5V
4V
4V
4V
1.5 A
5A
4V
4V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
= 1.5 A
I
C
= 15 A
I
C
= 25 A
I
C
= 15 A
I
C
= 25 A
I
C
= 15 A
I
C
= 25 A
I
C
=
I
C
=
1A
1A
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
f = 1 MHz
25
3
(see Notes 5 and 6)
25
10
5
1.8
4
2
4
V
V
I
B
= 0
BD249A
BD249B
BD249C
BD249
BD249A
BD249B
BD249C
BD249/249A
BD249B/249C
MIN
45
60
80
100
0.7
0.7
0.7
0.7
1
1
1
mA
mA
mA
V
TYP
MAX
UNIT
h
FE
V
CE(sat)
V
BE
h
fe
V
CE
= 10 V
V
CE
= 10 V
|
h
fe
|
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1
42
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= 5 A
V
BE(off)
= -5 V
I
B(on)
= 0.5 A
R
L
= 5
Ω
†
MIN
I
B(off)
= -0.5 A
t
p
= 20 µs, dc
≤
2%
TYP
0.3
0.9
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
