BD244, BD244A, BD244B, BD244C
PNP SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE
= -4 V
T
C
= 25°C
t
p
= 300 µs, duty cycle < 2%
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
1000
TCS634AH
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
-10
TCS634AE
I
C
= -300 mA
I
C
= -1 A
I
C
= -3 A
I
C
= -6 A
-1·0
h
FE
- DC Current Gain
100
10
-0·1
1·0
-0·1
-1·0
I
C
- Collector Current - A
-10
-0·01
-0·001
-0·01
-0·1
I
B
- Base Current - A
-1·0
-10
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
-1·2
V
CE
= -4 V
T
C
= 25°C
V
BE
- Base-Emitter Voltage - V
-1·1
TCS634AF
-1·0
-0·9
-0·8
-0·7
-0·6
-0·1
-1·0
I
C
- Collector Current - A
-10
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
