BD241, BD241A, BD241B, BD241C
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAS631AG
I
C
- Collector Current - A
10
t
p
= 300 µs, d = 0.1 = 10%
t
p
= 1 ms, d = 0.1 = 10%
t
p
= 10 ms, d = 0.1 = 10%
DC Operation
1·0
0·1
BD241
BD241A
BD241B
BD241C
10
100
1000
0·01
1·0
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
50
P
tot
- Maximum Power Dissipation - W
TIS631AA
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
