BD240, BD240A, BD240B, BD240C
PNP SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
1000
V
CE
= -4 V
t
p
= 300 µs, duty cycle < 2%
TCS632AG
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
-10
TCS632AE
T
C
= 25°C
T
C
= 80°C
I
C
= -100 mA
I
C
= -300 mA
I
C
= -1 A
h
FE
- DC Current Gain
-1·0
100
-0·1
10
-0·01
-0·1
I
C
- Collector Current - A
-1·0
-0·01
-0·1
-1·0
-10
-100
-1000
I
B
- Base Current - mA
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
-1·0
V
CE
= -4 V
T
C
= 25°C
V
BE
- Base-Emitter Voltage - V
-0·9
TCS632AF
-0·8
-0·7
-0·6
-0·5
-0·01
-0·1
I
C
- Collector Current - A
-1·0
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
