BD239, BD239A, BD239B, BD239C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD239
V
(BR)CEO
I
C
= 30 mA
(see Note 5)
V
CE
= 55 V
I
CES
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= 70 V
V
CE
= 90 V
V
CE
= 115 V
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE
h
fe
V
CE
= 30 V
V
CE
= 60 V
V
EB
=
V
CE
=
V
CE
=
I
B
=
V
CE
=
5V
4V
4V
0.2 A
4V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
= 0.2 A
I
C
=
I
C
=
I
C
=
1A
1A
1A
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
f = 1 MHz
20
3
40
15
0.7
1.3
V
V
I
B
= 0
BD239A
BD239B
BD239C
BD239
BD239A
BD239B
BD239C
BD239/239A
BD239B/239C
MIN
45
60
80
100
0.2
0.2
0.2
0.2
0.3
0.3
1
mA
µA
mA
V
TYP
MAX
UNIT
V
CE
= 10 V
V
CE
= 10 V
I
C
= 0.2 A
I
C
= 0.2 A
|
h
fe
|
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
4.17
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= 200 mA
V
BE(off)
= -3.4 V
I
B(on)
= 20 mA
R
L
= 150
Ω
†
MIN
I
B(off)
= -20 mA
t
p
= 20 µs, dc
≤
2%
TYP
0.3
0.8
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
