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MMBT3906 参数 Datasheet PDF下载

MMBT3906图片预览
型号: MMBT3906
PDF下载: 下载PDF文件 查看货源
内容描述: PNP通用晶体管 [PNP General Purpose Transistor]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 4 页 / 280 K
品牌: BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
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BL
Galaxy Electrical
PNP General Purpose Transistor
FEATURES
Epitaxial planar die construction.
Complementary NPN type available
(MMBT3904).
Low Current (Max:-100mA).
Low Voltage(Max:-40v).
Production specification
MMBT3906
Pb
Lead-free
APPLICATIONS
Ideal for medium power amplification and switching
SOT-23
ORDERING INFORMATION
Type No.
MMBT3906
Marking
2A
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Transistor mounted on an FR4 printed-circuit board.
Tamb≤25°C
CONDITIONS
open emitter
open base
open collector
MIN.
-
-
-
-
-
-
-
-65
-
-65
MAX.
-40
-40
-6
-100
-200
-100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
Document number: BL/SSSTC062
Rev.A
www.galaxycn.com
1