BL
Galaxy Electrical
PNP General Purpose Transistor
FEATURES
Epitaxial planar die construction.
Complementary NPN type available
(MMBT3904).
Low Current (Max:-100mA).
Low Voltage(Max:-40v).
Production specification
MMBT3906
Pb
Lead-free
APPLICATIONS
Ideal for medium power amplification and switching
SOT-23
ORDERING INFORMATION
Type No.
MMBT3906
Marking
2A
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Transistor mounted on an FR4 printed-circuit board.
Tamb≤25°C
CONDITIONS
open emitter
open base
open collector
MIN.
-
-
-
-
-
-
-
-65
-
-65
MAX.
-40
-40
-6
-100
-200
-100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
Document number: BL/SSSTC062
Rev.A
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