BL
FEATURES
GALAXY ELECTRICAL
LL4148
1111REVERSE
VOLTAGE: 75 V
CURRENT: 0.15 A
SMALL SIGNAL SWITCHING DIODE
Silicon epitaxial diode
High speed switching diode
500mW power dissipation
MINI-MELF
Cathode indification
φ
.5±0.1
1
3.4
+0.3
-0.1
0.4±0.1
MECHANICAL DATA
Case:MINI-MELF glass case
Polarity:Color band denotes cathode
Weight: Approx 0.031 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
MAXIMUM RATINGS
LL4148
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
Half w ave rectification w ith resistive load
at t
amb
=25
o
C and f
50Hz
I
FSM
P
tot
T
J
T
STG
I
O
V
R
V
RM
UNITS
V
V
mA
mA
mW
o
o
75.0
100.0
150.0
500.00
500.0
1)
175.0
35-55---
+175
Forw ard surge current at t 1S and T =25
o
C
J
Pow er dissipaton at t
amb
=25
o
C
Junction temperature
Storage temperature range
C
C
1) Valid prov ided that electrodes are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
MIN
Forw ard voltage @ I
F
=10mA
Leakage current
at V
R
=20V
at V
R
=75V
111111111at
V
R
=20V T
J
=150
o
C
Capacitance at V
F
=V
R
=0V
Voltage rise w hen sw itching on
tested w ith 50mA pulses
tp=0,1 S,rise time
30ns, fp=5 to 100KHz
TYP
-
-
-
-
-
-
MAX
1.0
25.0
5.0
50.0
4.0
2.5
UNITS
V
V
F
I
R
I
R
I
R
C
tot
V
fr
-
-
-
-
-
-
n
A
A
A
pF
V
Reverse recovery time
from I
F
=10mA
V
R
=6V,R
L
=100 ,at I
R
=1mA
Thermal resistance junction to ambient
Rectification effciency at 100MHz,V
RF
=2V
t
rr
R
-
-
4.0
350.0
1)
ns
K/W
-
www.galaxycn.com
JA
V
0.45
-
-
1)Valid prov ided that electrodes are kept at ambient temperature
Document Number
0268010
BL
GALAXY ELECTRICAL
1.
BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
