BL
Galaxy Electrical
Production specification
PNP Silicon Epitaxial Planar Transistor
BC856W/BC857W/BC858W
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Collector cut-off current
Symbol
Test conditions
I
C
=-10μA,I
E
=0
V
(BR)CBO
I
C
=-10mA,I
B
=0
V
(BR)CEO
BC856W
BC857W
BC858W
BC856W
BC857W
BC858W
MIN
-80
-50
-30
-65
-45
-30
-5
MAX
UNIT
V
V
V
(BR)EBO
I
E
=-1μA,I
C
=0
BC856W
BC857W
BC858W
BC856W
BC857W
BC858W
V
CB
=-70V,I
E
=0
V
CB
=-45V,I
E
=0
V
CB
=-25V,I
E
=0
V
CE
=-60V,I
B
=0
V
CE
=-40V,I
B
=0
V
CE
=-25V,I
B
=0
V
I
CBO
-0.1
μA
Collector cut-off current
I
CEO
-0.1
μA
Emitter cut-off current
I
EBO
V
EB
=-5V,I
C
=0
V
CE
=-5V,I
C
=-2mA
BC856AW,BC857AW
BC856BW,BC857BW,BC858BW
BC857CW,BC858CW
I
C
=-100mA, I
B
= -5mA
I
C
=-100mA, I
B
= -5mA
V
CE
=-5V,I
C
=-10mA,f=100MHz
V
CB
=-10V,f=1MHz
100
-0.1
μA
DC current gain
h
FE
125
220
420
250
475
800
-0.5
-1.1
mV
V
MHz
4.5
pF
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
Transition frequency
Collector capacitance
V
CE(sat)
V
BE(sat)
f
T
C
C
Document number: BL/SSSTF046
Rev.A
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BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
