BL
Galaxy Electrical
NPN General Purpose Amplifier
ELECTRICAL CHARACTERISTICS
@ Ta=25℃
Parameter
Symbol
Production specification
BC817-16/-25/-40
unless otherwise specified
MIN
MAX
UNIT
Test conditions
Collector-base breakdown voltage
V
(BR)CBO
I
C
=10μA I
E
=0
50
V
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V
(BR)CEO
I
C
=10mA I
B
=0
45
V
V
(BR)EBO
I
CBO
I
CEO
I
EBO
I
E
=1μA I
C
=0
V
CB
=45V I
E
=0
V
CE
=40V I
BE(off)
=0
V
EB
=4V I
C
=0
5
0.1
0.2
0.1
V
μA
μA
μA
DC current gain
817-16
817-25
817-40
h
FE
V
CE
=10V I
C
=150mA
100
160
250
250
400
600
Collector-emitter saturation voltage
V
CE(sat)
I
C
=500mA I
B
=50mA
0.7
V
Base-emitter saturation voltage
V
BE(sat)
I
C
=500mA I
B
=50mA
V
CE
=5V
f=100MHz
I
C
=10mA
1.2
V
Transition frequency
f
T
100
MHz
Document number: BL/SSSTC042
Rev.A
www.galaxycn.com
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BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
