BL
Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
Production specification
BC807W
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Test conditions
I
C
=-10μA,I
E
=0
I
C
=-2mA,I
B
=0
I
E
=-10μA,I
C
=0
V
CB
=-20V,I
E
=0
V
EB
=-5V,I
B
=0
V
CE
=-1V,I
C
=-100mA
BC807-16W
BC807-25W
BC807-40W
I
C
=-500mA, I
B
=-50mA
V
CE
=-5V, I
C
=-10mA
f=100MHz
V
CB
=-10V,I
E
=0,f=1MHz
80
10
100
160
250
MIN
-50
-45
-5
-0.1
-0.1
250
400
600
0.7
V
MHz
pF
TYP
MAX
UNIT
V
V
V
μA
μA
DC current gain
h
FE
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
f
T
C
ob
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF044
Rev.A
www.galaxycn.com
2
BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
