BL
Galaxy Electrical
ELECTRICAL CHARACTERISTICS
@ Ta=25℃
Characteristic
Forward Voltage
Reverse Current
BAV19WS
BAV20WS
BAV21WS
Symbol
V
FM
I
R
Min
-
-
Production specification
Silicon Epitaxial Planar Diode
BAV19WS/BAV20WS/BAV21WS
unless otherwise specified
Unit
V
μA
Test Condition
I
F
=100mA
I
F
=200mA
V
R
=100V
V
R
=150V
V
R
=200V
V
R
=0,f=1.0MHz
I
F
=I
R
=30mA,
I
rr
=0.1×I
R
,R
L
=100Ω
Max
1.0
1.25
0.1
0.1
0.1
5
50
Capacitance between
terminals
Reverse Recovery Time
C
T
t
rr
-
-
pF
ns
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSDB018
Rev.A
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