BL
Galaxy Electrical
Surface Mount Schottky Barrier Diode
Parameter
Reverse breakdown voltage
Leakage current
Symbol
V
(BR)R
I
R
Test conditions
I
R
=100μA
V
R
=25V
I
F
=0.1mA
I
F
=1.0mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
V
R
=1.0V,f=1MHz
Production specification
BAT54T/AT/CT/ST
MIN MAX
30
2.0
240
320
400
500
1000
10
5.0
UNIT
V
μA
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Forward voltage
V
F
mV
Typical total capacitance
Reverse recovery Time
C
T
t
rr
pF
ns
I
F
=I
R
=10mA,to I
R
=1.0mA R
L
=100Ω
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSKH011
Rev.A
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