BL
Galaxy Electrical
Silicon Epitaxial Planar Transistor
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation
voltage
Transition frequency
Output capacitance
Noise Figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
NF
Test conditions
I
C
=100μA,I
E
=0
I
C
=10mA,I
B
=0
B
Production specification
2SC5343
MIN
60
50
5
0.1
0.1
70
0.1
80
3.5
10
700
0.25
V
MHz
pF
dB
TYP
MAX
UNIT
V
V
V
μA
μA
I
E
=10μA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=6V,I
C
=2mA
I
C
=100mA, I
B
=10mA
B
V
CE
=10V, I
C
= 1mA
V
CB
=10V, I
E
=0,f=1kHz
V
CE
=6V,I
C
=0.1mA,f=1kHz
CLASSIFICATION
Rank
Range
OF
O
70-140
h
FE(1)
Y
120-240
G
200-400
L
300-700
Document number: BL/SSSTC022
Rev.A
www.galaxycn.com
2
BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
