BL
Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
Excellent h
FE
linearity.
Power dissipation:P
CM
=200mW
Production specification
2SC4097W
Pb
Lead-free
APPLICATIONS
NPN Silicon Epitaxial Planar Transistor.
SOT-323
ORDERING INFORMATION
Type No.
2SC4097W
Marking
CP/CQ/CR
Package Code
SOT-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
40
32
5
500
200
-55~150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF003
Rev.A
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BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
