BL
Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
Low noise and high gain: NF=1.1dB TYP,
G
a
=11dB TYP. @V
CE
=10V,I
C
=7mA,f=1.0GHz
High power gain:MAG=13dB TYP.
@V
CE
=10V.I
C
=20mA,f=1.0GHz
Production specification
2SC3356W
Pb
Lead-free
APPLICATIONS
NPN Silicon Epitaxial Planar Transistor.
SOT-323
ORDERING INFORMATION
Type No.
2SC3356W
Marking
R23/R24/R25
Package Code
SOT-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
20
12
3
100
200
-55~150
Units
V
V
V
mA
mW
℃
Document number: BL/SSSTF001
Rev.A
www.galaxycn.com
1
BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
