BL
Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
High DC current gain:h
FE
=130(Typ)
(V
CE
=3V,I
C
=15mA)
High voltage.
Production specification
2SC1654
Pb
Lead-free
APPLICATIONS
Audio frequency general purpose amplifier applications.
SOT-23
ORDERING INFORMATION
Type No.
2SC1654
Marking
N5/N6/N7
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
180
160
5
50
150
-55~150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC096
Rev.A
www.galaxycn.com
1
BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
