BL
Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Test conditions
I
C
=100μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100μA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=6V,I
C
=2mA
I
C
=100mA, I
B
= 10mA
I
C
=100mA, I
B
= 10mA
V
CE
=6V, I
E
= -10mA
V
CE
=6V, I
E
= 0mA
f=1.0MHz
Production specification
2SC1623W
MIN
60
50
6
0.1
0.1
90
200
0.15
0.86
250
3.0
600
0.3
1.0
V
V
MHz
pF
TYP
MAX
UNIT
V
V
V
μA
μA
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
CLASSIFICANTION OF h
FE
Marking
h
FE
L4
90-180
L5
135-270
L6
200-400
L7
300-600
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF035
Rev.A
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BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
