BL
Galaxy Electrical
Small Signal MOSFET Transistor
FEATURES
Low on-resistance.
Low gate threshold voltge.
Low input capacitance.
Fast switching speed.
Low input/output leakage.
Production specification
2N7002T
Pb
Lead-free
APPLICATIONS
N-channel enhancement mode effect transistor.
Switching application.
SOT-523
ORDERING INFORMATION
Type No.
2N7002T
Marking
72
Package Code
SOT-523
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
DSS
V
DGR
V
GSS
I
D
P
D
R
θJA
T
J
, Tstg
Parameter
Drain-Source voltage
Drain-Gate voltage(R
GS
≤1MΩ)
Gate -Source voltage
- continuous
-Non Repetitive (t
p
<50μs)
Maximum Drain current
Power Dissipation
Thermal resistance,Junction-to-Ambient
Junction and Storage Temperature
-continuous
-Pulsed
Value
60
60
±20
±40
115
800
150
833
-55-150
Units
V
V
V
mA
mW
℃/W
℃
Document number: BL/SSMTH016
Rev.A
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BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
