BL
FEATURES
GALAXY ELECTRICAL
1N5817S - - - 1N5819S
VOLTAGE RANGE: 20 --- 40 V
CURRENT: 1.0 A
SCHOTTKY BARRIER RECTIFIER
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx
wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
A
- 405
MECHANICAL DATA
Case:JEDEC
A--405,molded
plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,method 208
Polarity: Color band denotes cathode
Weight:
0.008 ounces,0.23 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
1N5817S
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
1N5818S
30
21
30
1.0
1N5819S
40
28
40
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
20
14
20
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=70
I
FSM
0.45
0.75
25.0
A
Maximum instantaneous forw ard voltage @ 1.0A
z
(Note 1)
@ 3.0A
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note2)
(Note3)
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
0.55
0.875
1.0
10.0
110
50
- 55 ---- + 125
- 55 ---- + 150
0.60
0.90
V
mA
pF
／Ｗ
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test : 300
s pulse width,1% duty cy cle.
www.galaxycn.com
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient
Document Number 0266038
BL
GALAXY ELECTRICAL
1.
BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
