BL
FEATURES
GALAXY ELECTRICAL
1N5712
VOLTAGE RANGE: 20 V
POWER DISSIPATION:
430 mW
SMALL SIGNAL SCHOTTKY DIODES
Metal-to-silicon junction
High breakdown voltage
Low turn-on voltage
Ultrafast switching speed
Prmarly intended for high level UHF/VHF detection
and pulse applications with broad dynamic range
DO - 35(GLASS)
MECHANICAL DATA
Case:JEDEC DO--35,glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Peak reverse voltage
Pow er dissipation (Infinite Heat Sink)
Forw ard continuous current
Junction and storage temperature range
Maximum lead temperature for soldering during 10S at 4mm from case
Value
20.0
430.0
35.0
c-55
---+ 150
230
UNITS
V
mW
mA
V
RRM
P
tot
I
FSM
T
J
/T
STG
T
L
ELECTRICAL CHARACTERISTICS
Symbols
Reverse breakdow n voltage
Leakage current
Forw ard voltage drop
Test pulse: tp 300 s
Junction capacitance
Thermal resistance
@ I
R
=10 A
Min.
20.0
Typ.
Max.
UNITS
V
V
R
I
R
V
F
C
J
R
θ
JA
@ V
R
=16V
@
<2%
I
F
=1mA
I
F
=35mA
150
0.41
1.0
2
400
nA
V
pF
K/W
@ V
R
=0V,f=1MHz
www.galaxycn.com
Document Number 0265006
BL
GALAXY ELECTRICAL
1.
BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
