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1H6G 参数 Datasheet PDF下载

1H6G图片预览
型号: 1H6G
PDF下载: 下载PDF文件 查看货源
内容描述: 玻璃钝化高效整流二极管 [Glass Passivated High Efficient Rectifiers]
分类和应用: 整流二极管高效整流二极管
文件页数/大小: 2 页 / 284 K
品牌: BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
 浏览型号1H6G的Datasheet PDF文件第2页  
1H1G THRU 1H8G
Features
· Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
· Low forward voltage drop
· High current capability
· High reliability
· Low power loss, high effciency
· High surge current capability
· High speed switching
· Low leakage
CURRENT 1.0 Ampere
VOLTAGE 50 to 1000 Volts
R-1
0.102(2.6)
0.091(2.3)
DIA.
0.787(20.0)
MIN.
Mechanical Data
· Case : R-1 molded plastic body
· Epoxy : UL94V-0 rate flame retardant
· Lead : Plated axial lead solderable per MIL-STR-750,
method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.007 ounce, 0.19 gram
0.126(3.2)
0.106(2.7)
0.025(0.65)
0.021(0.55)
DIA.
0.787(20.0)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length T
A
=55℃
Peak forward surge current 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 1.0A
Maximum DC Reverse Current at rated DC
blocking voltage
Maximum full load reverse current full cycle
average. 0.375"(9.5mm) lead length at
T
L
=55℃
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Operating Junction and Storage temperature
Range
I
R
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
1H1G 1H2G 1H3G 1H4G 1H5G 1H6G 1H7G 1H8G
50
35
50
100
70
100
200
140
200
300
210
300
1.0
25.0
1.0
1.3
5.0
1.7
400
280
400
600
420
600
800
560
800
1000
700
1000
Units
Volts
Volts
Volts
Amp
Amps
Volts
μA
100
Trr
C
J
T
J
T
STG
50
20
-65 to +150
70
15
ns
pF
Notes:
(1) Test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A.
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.