Preliminary Datasheet
150mA RF ULDO REGULATOR
Electrical Characteristics (Continued)
V
IN
=V
OUT
+1V, I
OUT
= 100µA, C
L
= 2.2µF, V
EN
≥
2.0V, T
J
= 25
o
C,
Bold
typeface applies over -40
o
C<T
J
<125
o
C, unless other-
wise specified.
Parameter
Symbol
Conditions
AP2202-3.3V
I
OUT
= 0.1mA to 150mA
AP2202-4.0V
I
OUT
= 0.1mA to 150mA
I
OUT
=100µA
I
OUT
=50mA
Dropout Voltage (Note 5)
V
IN
-V
O
I
OUT
=100mA
I
OUT
=150mA
Quiescent Current
I
Q
V
EN
≤
0.4V (shutdown)
V
EN
≤
0.18V (shutdown)
V
EN
≥
2.0V, I
OUT
=0µA
V
EN
≥
2.0V, I
OUT
=100µA
Ground Pin Current (Note 6)
I
GND
V
EN
≥
2.0V, I
OUT
=50mA
V
EN
≥
2.0V, I
OUT
=100mA
V
EN
≥
2.0V, I
OUT
=150mA
Ripple Rejection
Current Limit
Output Noise
(Regulator B only)
Enable Input
Voltage
Enable Input
Voltage
Enable Input
Current
Enable Input
Current
Logic-Low
Logic-High
Logic-Low
Logic-High
PSRR
I
LIMIT
e
no
V
IL
V
IH
I
IL
I
IH
frequency=100Hz, I
OUT
=100µA
V
OUT
= 0V
I
OUT
=50mA, C
L
=2.2µF,
470 pF from BYP to GND
Regulator shutdown
Regulator enabled
V
IL
≤
0.4V
V
IL
≤
0.18V
V
IL
≥
2.0V
V
IL
≥
2.0V
5
2.0
0.01
-1
-2
20
25
µA
95
98
350
600
1300
75
320
260
0.4
0.18
V
µA
550
140
165
0.01
Min
Typ
1
1
15
110
Max
8
17
9
20
50
70
150
230
250
300
275
350
1
5
130
150
140
160
600
800
1000
1500
1900
2500
dB
mA
nV
/
Hz
AP2202
Unit
Load Regulation (Note 4)
V
RLOAD
mV
mV
µA
µA
V
Aug. 2005 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
7
BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
