Preliminary Datasheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
Electrical Characteristics
AP2138/2139-1.2 Electrical Characteristics
(V
IN
=2.5V, V
CE
=2.5V (AP2139),T
J
=25
o
C, I
OUT
=40mA, C
IN
=C
OUT
=1µF,
Bold
typeface applies over -40
o
C≤T
J
≤85
o
C, unless
otherwise specified.)
Parameter
Input Voltage
Output Voltage
Quiescent Current
Standby Current (AP2139)
Output Current
Load Regulation
Line Regulation
Symbol
V
IN
V
OUT
I
Q
I
STD
I
OUT
V
RLOAD
V
RLINE
1mA≤I
OUT
≤100mA
2.2V≤V
IN
≤6V
I
OUT
=10mA
Dropout Voltage
V
DROP
I
OUT
=30mA
I
OUT
=100mA
I
OUT
=250mA
Output Voltage
Temperature Coefficient
Short Circuit Current
CE Pull-down Constant
Current (AP2139)
CE Input Logic-high
Voltage (AP2139)
CE Input Logic-low
Voltage (AP2139)
∆V
OUT
/∆T
(∆V
OUT
/V
OUT
)/∆T
I
SHORT
I
PD
V
IH
V
IL
SOT-23-3
Thermal Resistance
θ
JC
SOT-23-5
SOT-89
81.9
81.9
51.1
o
AP2138/2139
Conditions
Min
Typ
Max
6.6
Unit
V
V
µA
µA
mA
1.176
I
OUT
=0
V
CE
=0
250
1.200
1.0
0.1
1.224
1.5
1
25
6
100
400
700
1000
40
18
300
700
1000
1300
mV
mV
mV
±
140
±
100
V
OUT
=0
50
0.2
1.2
0.3
µV/
o
C
ppm/
o
C
mA
µA
V
V
C/W
Jul. 2011 Rev. 2. 0
7
BCD Semiconductor Manufacturing Limited
BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
